论文标题
通过离子植入通过订单降级过渡诱导PBZRO3薄膜中的极性纳米区域的储能密度的三元三元储能密度
Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation
论文作者
论文摘要
由于其超高功率密度和极快的充电/放电速度，介电电容器被广泛用于脉冲电源设备中。为了达到增强的能量储能密度，需要同时改善最大极化（PMAX）和分解强度（EB）。但是，这两个关键参数是成反比的。在这项研究中，通过利用低能量离子植入，使我们能够克服高极化性和分解强度之间的权衡，从而在PBZRO3薄膜中实现了订单差异过渡诱导的极性纳米区域（PNR），从而使我们能够在20.5 j/cm3 j/cm3 j/cm3 j/cm3 j/cm3 j/cm3 j/cm3 j/cm perterion中的三元储存量之间的三重三重均衡。这种方法可以扩展到其他介电氧化物，以改善能量储能性能，从而为调整氧化物功能提供了新的途径。
Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.
