论文标题
巨大的隧道磁力固定效果，基于范德华的室温feRomagnet fe $ _3 $ gate $ _2 $，带有高度自旋极化的费米表面
Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces
论文作者
论文摘要
最近，Van der Waals（VDW）磁异质结构在Spintronics中引起了越来越多的研究注意力。但是，VDW材料缺乏室温磁序，在很大程度上阻碍了其在实用的Spintronics设备中的发展。受到最近发现的VDW Ferromagnet Fe3gate2的启发，该Fe3gate2已显示出磁性顺序高于室温和相当大的垂直磁各向异性，我们研究了Fe3gate2的基本电子结构和磁性的基本电子结构和磁性，并使用Fe3gations/Instrations/Instrate intrations fe3gations（MTJS）进行触发磁力（MTJS），计算。发现具有高自旋偏振的费米表面的Fe3gate2确保这种磁性隧道连接在室温下可能具有显着的隧道磁力效果，甚至与现有的常规Alox和Mo基于MGO的MTJ相当。我们的结果表明，基于Fe3gate2的MTJ可能是实现长期等待完整磁性VDW Spintronic设备的有前途的候选人。
Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.
