论文标题
Kerr非线性折射率的测量及其在4H-SIC晶片中的变化
Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers
论文作者
论文摘要
碳化硅（SIC）的独特材料特性以及最新的低损坏SIC-on-On-on-on-on-popthatic Photonics平台吸引了有关芯片尺度光子和量子应用的大量研究兴趣。在这里，我们对几个主要晶圆制造商的4H-SIC晶圆中的Kerr非线性进行了彻底的调查，并首次揭示其Kerr非线性折射率可能会显着不同。通过消除四波混合实验中的各种测量误差，并改善了高分数 - 对比度波导的理论建模，估计4H-SIC WAFERS的最佳Kerr非线性折射率估计约为stoichiemotricricy nitride在电信带中的四倍。此外，有实验证据表明，4H-SIC晶圆中的Kerr非线性沿C轴比正交方向更强，这一特征从未报道过。
The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications. Here, we carry out a thorough investigation of the Kerr nonlinearity among 4H-SiC wafers from several major wafer manufacturers, and reveal for the first time that their Kerr nonlinear refractive index can be significantly different. By eliminating various measurement errors in the four-wave mixing experiment and improving the theoretical modeling for high-index-contrast waveguides, the best Kerr nonlinear refractive index of 4H-SiC wafers is estimated to be approximately four times of that of stoichiometric silicon nitride in the telecommunication band. In addition, experimental evidence is developed that the Kerr nonlinearity in 4H-SiC wafers can be stronger along the c-axis than that in the orthogonal direction, a feature that was never reported before.
