论文标题
Terahertz半导体激光源在-12 C
Terahertz semiconductor laser source at -12 C
论文作者
论文摘要
Terahertz量子级联激光器（THZ QCLS）的室温运行一直是实现紧凑型半导体THZ源的长期目标。与红外QCL相比，由于THZ频率更大的挑战，在THZ QCL中朝着高温运行方面的进展相对较慢。最近，THZ QCL的最高工作温度提高到250 K，而成就使THZ社区的希望振兴了追求更高温度操作的希望。在本文中，我们通过明智地优化关键参数，并讨论实现室温运行的挑战，从而将工作温度进一步提高至〜261 K（-12 0C）。
Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and the achievement revitalized hope in the THz community in pursuit of higher temperature operations. In this paper, we report on further improvement in operating temperature to ~261 K (-12 0C) by judiciously optimizing key parameters and discuss the challenges ahead in achieving room temperature operation.
