论文标题
掺杂的莫特 - 哈伯德绝缘子的大厅效应
Hall Effect in Doped Mott-Hubbard Insulator
论文作者
论文摘要
我们介绍了掺杂的莫特 - 哈伯德绝缘子中霍尔效应的理论分析，该糖是被认为是铜酸盐超导体的原型。我们考虑DMFT近似中的标准哈伯德模型。作为典型情况，我们考虑部分填充（孔掺杂）下部哈伯德频带。我们计算霍尔系数和霍尔数量的掺杂依赖性，并确定载体浓度的值，其中大厅效应会改变其符号。我们获得了HALL效应参数对温度的显着依赖性。我们还以定性的方式考虑了障碍效应。我们还对我们的理论结果进行了比较，与YBCO和ND-LSCO正常状态的一些已知实验有关HALL数量的掺杂依赖性的一些已知实验，表明理论和实验的一致性相当令人满意。因此，在哈伯德模型中获得的霍尔效应参数的掺杂依赖性可以被视为量子临界点流行模型的替代方案。
We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the partially filled (hole doping) lower Hubbard band. We calculate the doping dependence of both the Hall coefficient and Hall number and determine the value of carrier concentration, where Hall effect changes its sign. We obtain a significant dependence of Hall effect parameters on temperature. Disorder effects are taken into account in a qualitative way.We also perform a comparison of our theoretical results with some known experiments on doping dependence of Hall number in the normal state of YBCO and Nd-LSCO, demonstrating rather satisfactory agreement of theory and experiment. Thus the doping dependence of Hall effect parameters obtained within Hubbard model can be considered as an alternative to a popular model of the quantum critical point.
