论文标题
音调以稳健的角模式阻塞原子绝缘子
Phononic Obstructed Atomic Insulators with Robust Corner Modes
论文作者
论文摘要
高阶拓扑绝缘子(HOTIS)通过在某些$必需的无人居住的Wyckoff位置以对称指数衰减的衰减函数来描述,并分类为拓扑量子化学(TQC)理论中阻塞的原子绝缘子(OAIS)。到目前为止,HOTIS中的边界状态通常很脆弱,这表现为强烈的,具体取决于磁盘或圆柱几何形状中的晶体对称性和裂解终止。在这里,使用TQC理论,我们提出了一个直观的论点,即OAI被阻塞的隐形电荷中心与二维系统中健壮角状态的出现之间的联系。基于第一原理的计算和真实的空间不变理论,我们将OAI的概念扩展到了声子系统,从而预测可以在$ MX_3 $($ M $ = BI,SB,AS,SC,SC,Y; $ x $ = I,BR,BR,CL)单层的声音光谱中实现强大的角状态。研究了不同形状的纳米盘形式的声子模式,其稳健性有助于实验和进一步应用中的检测。这项工作提出了一个有希望的途径,可以探索更高阶乐队拓扑的更具吸引力的特征。
Higher-order topological insulators (HOTIs) are described by symmetric exponentially decayed Wannier functions at some $necessary$ unoccupied Wyckoff positions and classified as obstructed atomic insulators (OAIs) in the topological quantum chemistry (TQC) theory. The boundary states in HOTIs reported so far are often fragile, manifested as strongly depending on crystalline symmetries and cleavage terminations in the disk or cylinder geometry. Here, using the TQC theory, we present an intuitive argument about the connection between the obstructed Wannier charge centers of OAIs and the emergence of robust corner states in two-dimensional systems. Based on first-principles calculations and Real Space Invariant theory, we extend the concept of OAIs to phonon systems and thereby predict that the robust corner states can be realized in the phonon spectra of $MX_3$ ($M$=Bi, Sb, As, Sc, Y; $X$=I, Br, Cl) monolayers. The phonon corner modes in different shapes of nano-disks are investigated, and their robustness facilitates the detection in experiments and further applications. This work suggests a promising avenue to explore more attractive features of higher-order band topology.