论文标题
内在2D磁性半导体CR2GE2TE6中的自旋滤波效果6
Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6
论文作者
论文摘要
所有Van der Waals（VDW）FE3Gete2/CR2GE2TE6/Chaphite磁性杂音已通过机械去角质和堆叠制造，并详细研究了它们的磁转运性能。在低偏置电压下，已经观察到了大的负连接磁路，并归因于跨绝缘CR2GE2TE6层的自旋式隧道运输。随着偏见的增加，发生了对Fowler-Nordheim隧道的交叉。隧穿磁磁力（TMR）的负迹象表明，CR2GE2TE6中的传统带的底部属于少数派，与某些第一原理计算的发现相反。这项工作表明，基于2D磁性绝缘体的VDW异质结构是一个有价值的平台，可以进一步了解自旋极化隧穿传输，这是追求高性能自旋设备和各种量子现象的基础。
All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages large negative junction magnetoresistances have been observed and are attributed to spin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer. With increasing bias, a crossover to Fowler-Nordheim tunneling takes place. The negative sign of the tunneling magnetoresistance (TMR) suggests that the bottom of conduction band in Cr2Ge2Te6 belongs to minority spins, opposite to the findings of some first-principles calculations. This work shows that the vdW heterostructures based on 2D magnetic insulators are a valuable platform to gain further insight into spin polarized tunneling transport, which is the basis for pursuing high performance spintronic devices and a large variety of quantum phenomena.
