论文标题
硅$4π$光谱仪，用于$β$ -DECAY电子，具有3〜MEV的能量
Silicon $4π$ spectrometer for $β$-decay electrons with energies up to 3~MeV
论文作者
论文摘要
我们介绍了最初开发的$β$ -Spectrometer的描述，该光谱是由两个Si（li） - 检测器组成的，其敏感面积厚度高于8〜mm和$4π$ - 几何。完整的吸收光谱仪允许直接测量$β$ -Spectra，无视由电子从晶体表面反向散射引起的响应函数的校正。如果$β$ -Spectra向女儿同位素的激发状态的过渡状态，则使用3英寸BGO检测器，以检测$γ$ - Quanta与这对Si（Li） - 光谱仪一致。
We present a description of the originally developed $β$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4π$-geometry. The full absorption spectrometer allows for direct measurements of $β$-spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $β$-spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $γ$-quanta in coincidence with the pair of Si(Li)-spectrometers.
