论文标题
晶体的晶体生长，表征和电子带结构
Crystal growth, characterization and electronic band structure of TiSeS
论文作者
论文摘要
由于电荷密度波（CDW）状态和超导性的相互作用，分层的半金属范德华材料Tise2引起了很大的关注。它的姊妹化合物Tis2（可代表Tise2）具有相同的晶体结构，显示出半导体的行为。自然上升了Tise2-XSX中的过渡点发生的情况，这是X接近1的期望。在这里，我们报告了Tises单晶的生长和表征，以及使用密度功能理论（DFT）和角度分辨光光发射（ARPES）对电子结构的研究。我们表明，单晶的形态与Tise2具有相同的形态。运输测量显示金属状态，未发现CDW的证据。 DFT计算表明，Tises中的电子带结构与Tise2相似，但是Tises中的电子和孔口袋要小得多。 ARPES结果与计算非常吻合。
Layered semimetallic van der Waals materials TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural rises what happens at the transition point in TiSe2-xSx, which is expected for x close to 1. Here we report the growth and characterization of TiSeS single crystals and the study of the electronic structure using density functional theory (DFT) and angle-resolved photoemission (ARPES). We show that TiSeS single crystals have the same morphology as TiSe2. Transport measurements reveal a metallic state, no evidence of CDW was found. DFT calculations suggest that the electronic band structure in TiSeS is similar to that of TiSe2, but the electron and hole pockets in TiSeS are much smaller. The ARPES results are in good agreement with the calculations.
