论文标题
谷化库仑散射在几层石墨烯中引起的超导性
Superconductivity induced by the inter-valley Coulomb scattering in a few layers of graphene
论文作者
论文摘要
我们研究了库仑排斥引起的valley间散射，作为在几层石墨烯层中超导性起源的纯电子机制。范·霍夫（Van Hove）奇异性（VHS）在状态密度（DOS）中的存在非常青睐配对。我们考虑了三种不同的Hetherostructures：扭曲的双层石墨烯（TBG），菱形三层石墨烯（RTG）和Bernal双层石墨烯（BBG）。我们获得了与实验发现一致的超导（SC）临界温度的趋势和估计，这些温度可能会识别出瓦利库仑间散射是几层石墨烯中的通用配对机制。
We study the inter-valley scattering induced by the Coulomb repulsion as a purely electronic mechanism for the origin of superconductivity in few layers of graphene. The pairing is strongly favored by the presence of van Hove singularities (VHS's) in the density of states (DOS). We consider three different hetherostructures: twisted bilayer graphene (TBG), rhombohedral trilayer graphene (RTG) and Bernal bilayer graphene (BBG). We obtain trends and estimates of the superconducting (SC) critical temperature in agreement with the experimental findings, which might identify the inter-valley Coulomb scattering as a universal pairing mechanism in few layers of graphene.
