论文标题
晶圆级无基质的低压力氮化硅平台，用于THZ MetadeVices和单一集成的窄带超材料吸收器
Wafer-level substrate-free low-stress silicon nitride platform for THz metadevices and monolithically integrated narrowband metamaterial absorbers
论文作者
论文摘要
Terahertz（THZ）晶圆级METADEVICES的实施对于推进应用科学至关重要，包括（i）可以为生物学成像的集成焦平面阵列，以及（ii）（ii）高光谱分辨率THZ光谱学的集成窄带吸收器。 THZ超材料的发展取得了重大进展。但是，晶圆级的低压力THZ MetadeVices平台仍然是一个挑战。本文在实验上展示了一个无基质的THZ MetadeVices平台，该平台采用了工程化的SI含量和低压力硅（SINX）薄膜，可达到f = 2.5 THz的广泛THZ透明度。首先从Lorentz模型报告了一种新的分析模型，该模型可以准确预测金属绝缘子金属（MIM）超材料吸收器的光谱响应。该模型在THZ范围内进行了实验验证，并利用了THZ吸收器的首次演示，该表现表现出接近预测结果的性能。我们的结果表明，晶圆级的Sinx平台将加速大规模，复杂的无基质THZ MetadeVices的发展。 Lorentz模型及其二次模型将是设计THZ MetadeVices的非常实用的方法。
The implementation of terahertz (THz) wafer-level metadevices is critical to advance the science for applications including (I) integrated focal plane array which can image for biology and (II) integrated narrowband absorbers for high spectral resolution THz spectroscopy. Substantial progress has been made in the development of THz metamaterials; however, a wafer-level low-stress THz metadevices platform remains a challenge. This paper experimentally demonstrates a substrate-free THz metadevices platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films, achieving an extensive THz transparency up to f = 2.5 THz. A new analytical model is first reported from the Lorentz model that can accurately predict spectral responses of metal insulator metal (MIM) metamaterial absorbers. The model is experimentally validated in the THz range and exploited for the first demonstration of a THz absorber, which exhibits performance approaching the predicted results. Our results show that the wafer-level SiNx platform will accelerate the development of large-scale, sophisticated substrate-free THz metadevices. The Lorentz model and its quadratic model will be a very practical method for designing THz metadevices.
