论文标题

掺杂Wigner-mott绝缘子:过渡金属二基元基因莫伊尔杂质的外来电荷顺序

Doping a Wigner-Mott insulator: Exotic charge orders in transition-metal dichalcogenide moiré heterobilayers

论文作者

Tan, Yuting, Tsang, Pak Ki Henry, Dobrosavljević, Vladimir, Rademaker, Louk

论文摘要

晶格不匹配在过渡金属二甲基元基因异源杂质中引起的莫伊尔模式会导致扁平带的形成,其中相互作用占主导地位。在平坦价带的分数填充物中,远程电子相互作用诱导了wigner-mott晶体。在这封信中,我们调查了远离相应填充物的非平凡电子相。在这里,出现的竞争阶段要么被描述为掺杂的Wigner-mott电荷传输器,要么是具有冷冻电荷顺序的新型状态,但正在进行:“电子泥”。我们建议,在空间上极为不均匀的状态密度可以作为电子泥浆的关键特征。

The moiré pattern induced by lattice mismatch in transition-metal dichalcogenide heterobilayers causes the formation of flat bands, where interactions dominate the kinetic energy. At fractional fillings of the flat valence band, the long-range electron interactions then induce Wigner-Mott crystals. In this Letter we investigate the nontrivial electronic phases appearing away from commensurate fillings. Here, competing phases arise that are either characterized as doped Wigner-Mott charge transfer insulators or alternatively, a novel state with frozen charge order yet is conducting: the 'electron slush'. We propose that an extremely spatially inhomogeneous local density of states can serve as a key signature of the electron slush.

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