论文标题

铁磁层间交换耦合对CO/PT/CO多层系统中电流诱导的磁化切换和Dzyaloshinskii-Moriya相互作用的影响

Influence of Ferromagnetic Interlayer Exchange Coupling on Current-induced Magnetization Switching and Dzyaloshinskii-Moriya Interaction in Co/Pt/Co Multilayer System

论文作者

Grochot, Krzysztof, Ogrodnik, Piotr, Mojsiejuk, Jakub, Mazalski, Piotr, Guzowska, Urszula, Skowroński, Witold, Stobiecki, Tomasz

论文摘要

本文研究了层间交换耦合(IEC),dzyaloshinskii-moriya相互作用(DMI)和在CO/PT/CO杂货结构内的多级磁化切换之间的关系,其中不同的PT厚度可在耦合强度上启用PT厚度启用控制。使用Brillouin光散射来量化有效的DMI,我们探索了其在磁化动力学和多层次磁化开关中的潜在作用。实验发现显示在外部磁场和旋转效果相关的自旋电流下的四个不同的电阻状态。我们根据PT/CO和CO/PT接口与层间耦合之间的不对称性解释这种现象,这反过来又影响DMI并随后影响磁化动力学。数值模拟,包括宏生,1D域壁和简单的自旋波模型,进一步支持了多级切换的实验观察结果,并有助于发现基本机制。我们提出的解释是通过使用极性磁通型KERR显微镜观察磁性域观察的支持,可以深入了解磁化的空间分布及其对不同IEC的动力学,从而阐明了其与DMI的相互作用,这可能会导致潜在的存储设备中的潜在应用。

This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and multilevel magnetization switching. Experimental findings show four distinct resistance states under an external magnetic field and spin Hall effect related spin current. We explain this phenomenon based on the asymmetry between Pt/Co and Co/Pt interfaces and the interlayer coupling, which, in turn, influences DMI and subsequently impacts the magnetization dynamics. Numerical simulations, including macrospin, 1D domain wall, and simple spin wave models, further support the experimental observations of multilevel switching and help uncover the underlying mechanisms. Our proposed explanation, supported by magnetic domain observation using polar-magnetooptical Kerr microscopy, offers insights into both the spatial distribution of magnetization and its dynamics for different IECs, thereby shedding light on its interplay with DMI, which may lead to potential applications in storage devices.

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