论文标题
通过凹陷的双层石墨烯连接的隧道电导
Tunneling conductance through gapped bilayer graphene junctions
论文作者
论文摘要
通过考虑带隙和偏置电压项，获得了通过单层石墨烯（SLG）和AA/AB堆叠双层石墨烯（BLG）连接的电导。首先，我们考虑张开的SLG，而在两者之间，它们连接到原始的BLG中。对于大于层跳的费米能量，电导与双层区域长度$ d $的函数揭示了与同一时期的两种不同模型的抗共振模型。随着乐队差距的函数，随着AA-BLG的堆叠，结果表明，无论$ d $的价值如何，该电导都具有相同的最小值，而对于AB-Blg来说，$ d $仍然相关，因此该系统会产生全球能量差距。其次，我们考虑原始的SLG，在两者之间，它们与偏见的BLG相连。我们观察到具有不同的周期和形状的电导率中的峰出现，以及与第一个构型相比，具有零电导率的klein隧道的存在。当$ d $小于10时，$ g（e）$消失并展示反klein隧道作为费米能源$ e $的函数。我们还研究电导是偏差的函数。对于AA-BLG，结果显示出抗偏置值的抗抗抗病性和减小，而与长度的双层区域无关。相比之下，AB-Blg的电导具有不同的特征，因为它开始使用Maxima进行小$ e $，而Minima则以大$ e $进行。
The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected into pristine BLG. For Fermi energy larger than the interlayer hopping, the conductance as a function of the bilayer region length $d$ reveals two different models of anti-resonances with the same period. As a function of the band gap, with AA-BLG stacking, the results show that the conductance has the same minima whatever the value of $d$, and for AB-BLG, $d$ remains relevant such that the system creates a global energy gap. Second, we consider pristine SLG, and in between, they are connected to gapped-biased BLG. We observe the appearance of peaks in the conductance profile with different periods and shapes, and also the presence of Klein tunneling with zero conductance in contrast to the first configuration. When $ d $ is less than 10, $G(E)$ vanishes and exhibits anti-Klein tunneling as a function of the Fermi energy $E$. We also investigate the conductance as a function of the bias. For AA-BLG, the results show antiresonances and diminish for a large value of the bias, independently of the bilayer region of length. In contrast, the conductance in AB-BLG has distinct characteristics in that it begins conducting with maxima for small $E$ and with minima for large $E$.
