论文标题
GFET上的无裂纹溶胶 - 凝胶氧化铝沉积的种子层工程
Seed Layer Engineering for Crack-free Sol-gel Alumina Deposition on GFETs
论文作者
论文摘要
探索了低成本和低热预算的自旋涂层溶液氧化铝作为GFET的介电/钝化层。热退火后，在石墨烯通道上方正好正上方的Sol-Gel氧化铝层中观察到裂纹。裂纹的可能机制可能是石墨烯横向恢复由于（i）石墨烯和相邻层之间的热膨胀系数（TEC）差异以及（ii）在溶剂去除过程中产生的收缩应力。基于裂纹形成现象，进行了不同退火方案（低热预算DUV退火）和种子层工程（厚度和不同沉积方案）的组合。最后，提出了一种具有DUV退火的新型两步种子层沉积法，并证明可以成功地解决裂纹问题，并能够保留电气特性中的DIRAC点。
Low cost and low thermal budget based spin-coated sol-gel Alumina was explored as a dielectric/passivation layer for GFET. Post thermal annealing, the crack was observed in sol-gel Alumina layer exactly above the graphene channel. The possible mechanism of crack could be graphene lateral restoring movement due to (i) Thermal Expansion Coefficient (TEC) difference between graphene and adjacent layers and (ii) shrinkage stress generated during the solvent removal process. Based on the crack formation phenomenon, a combination of different annealing schemes (low thermal budget DUV annealing) and seed layer engineering (thickness and different deposition schemes) were carried out. Finally, a novel two-step seed layer deposition method with DUV annealing was proposed and demonstrated to resolve the crack issue successfully and also able to retain the Dirac point in the electrical characteristics.
