论文标题
在IIII-V底物上（001）面向PBSE的外延膜中的多功能应变释放途径
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
论文作者
论文摘要
PBSE和相关的IV-VI岩石结构半导体具有重要的电子特性，可以通过外延应变和界面控制，因此在新兴类的IV-VI/III-V异质结构中利用。这种异质结构的综合和理解应变浮雕的机制对于实现这一目标至关重要。我们表明，一系列界面缺陷介导（001）面向PBSE的（001）的外延薄膜中介导的晶格不匹配，并带有IIII-V的GAAS，INAS和GASB的III-V模板。尽管PBSE中的脱位滑行的主要滑动系统{100} <110>对其简单的滑行特性进行了充分研究，但它在我们工作中使用的（001）面向的膜中不活动。 Yet, we obtain nearly relaxed PbSe films in the three heteroepitaxial systems studied with interfaces ranging from incoherent without localized misfit dislocations on 8.3% mismatched GaAs, a mixture of semi-coherent and incoherent patches on 1.5% mismatched InAs, to nearly coherent on 0.8% mismatched GaSb.接口的半相位部分通过60°失误位错上的INAS形式，在高阶{111} <110>滑移系统上滑行。在更紧密的晶格匹配的气体上，通过攀爬过程形成了90°（边缘）失调位错的阵列。 PBSE可访问的应变 - 浮肿机制的多样性使其成为与IIII-V底物杂质整合的丰富系统。
PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of such heterostructures and understanding mechanisms for strain-relief is central to achieving this goal. We show that a range of interfacial defects mediate lattice mismatch in (001)-oriented epitaxial thin films of PbSe with III-V templates of GaAs, InAs, and GaSb. While the primary slip system {100}<110> for dislocation glide in PbSe is well-studied for its facile glide properties, it is inactive in (001)-oriented films used in our work. Yet, we obtain nearly relaxed PbSe films in the three heteroepitaxial systems studied with interfaces ranging from incoherent without localized misfit dislocations on 8.3% mismatched GaAs, a mixture of semi-coherent and incoherent patches on 1.5% mismatched InAs, to nearly coherent on 0.8% mismatched GaSb. The semi-coherent portions of the interfaces to InAs form by 60° misfit dislocations gliding on higher order {111}<110> slip systems. On the more closely lattice-matched GaSb, arrays of 90° (edge) misfit dislocations form via a climb process. The diversity of strain-relaxation mechanisms accessible to PbSe makes it a rich system for heteroepitaxial integration with III-V substrates.
