论文标题
测量半导体中的Migdal效应以进行暗物质检测
Measuring the Migdal effect in semiconductors for dark matter detection
论文作者
论文摘要
Migdal效应受到了暗物质直接检测界的广泛关注，尤其是由于其在Sub-Gev粒子暗物质上的限制方面的力量。当前，没有使用标准模型探针通过核散射来证实Migdal效应。在这项工作中，我们将Migdal效应的现有计算扩展到中子核散射的情况，特别关注硅中的中子散射角分布。我们确定了运动状态，其中在当前计算中子效应中存在的假设中存在中子散射，并证明这些假设包括可行的中子校准方案。然后，我们将此框架应用于提出实验策略，以使用升级到Fermilab的Nexus设施的升温硅检测器中的Migdal效应。
The Migdal effect has received much attention from the dark matter direct detection community, in particular due to its power in setting limits on sub-GeV particle dark matter. Currently, there is no experimental confirmation of the Migdal effect through nuclear scattering using Standard Model probes. In this work, we extend existing calculations of the Migdal effect to the case of neutron-nucleus scattering, with a particular focus on neutron scattering angle distributions in silicon. We identify kinematic regimes wherein the assumptions present in current calculations of the Migdal effect hold for neutron scattering, and demonstrate that these include viable neutron calibration schemes. We then apply this framework to propose an experimental strategy to measure the Migdal effect in cryogenic silicon detectors using an upgrade to the NEXUS facility at Fermilab.
