论文标题
拓扑晶体管的紧凑模型
Compact Model of a Topological Transistor
论文作者
论文摘要
铁磁体的进攻导致向相邻的非磁性材料注入自旋电流和热量。此外，自旋轨道纠缠会引起额外的电荷电流注入。最近已经提出了这种设备，即与铁磁绝缘子（FI）（FI）和超导体（SC）接近量子旋转厅绝缘子（QSHI），导致电荷，自旋和热量的泵送。在这里，我们为QSHI-FI-SC设备构建了与电路兼容的verilog-A基本模型，该模型能够生成两种拓扑上可靠的模式，可实现设备操作。我们的模型还捕获了对铁磁精度，排水电压和温度的依赖性，其精度非常好（> 99％）。
The precession of a ferromagnet leads to the injection of spin current and heat into an adjacent non-magnetic material. Besides, spin-orbit entanglement causes an additional charge current injection. Such a device has been recently proposed where a quantum-spin hall insulator (QSHI) in proximity to a ferromagnetic insulator (FI) and superconductor (SC) leads to the pumping of charge, spin, and heat. Here we build a circuit-compatible Verilog-A-based compact model for the QSHI-FI-SC device capable of generating two topologically robust modes enabling the device operation. Our model also captures the dependence on the ferromagnetic precision, drain voltage, and temperature with an excellent (> 99%) accuracy.
