论文标题
CVD增长参数对MOS $ _2 $单层的全球和本地光学性质的影响
Effects of CVD Growth Parameters on Global and Local Optical Properties of MoS$_2$ Monolayers
论文作者
论文摘要
半导体过渡金属二分法（TMDS）结合了较强的光 - 物质相互作用与良好的化学稳定性和可扩展的制造技术，因此是光电，光子和光收获应用的绝佳前景。缺陷含量低的高质量TMD单层的可控制造仍然具有挑战性，并阻碍了其用于技术应用的采用。化学蒸气沉积（CVD）生长的单层MOS $ _2 $的光学性质在很大程度上受到CVD化学计量的影响，而CVD受控钼（MO）前体的硫化。在这里，我们研究了硫浓度如何影响样品形态以及全球和局部的光学反应。我们确认，在MO：S> 1：2化学计量比下生长的样品具有正常的形态，该形态通过具有出色的光学响应的三角形单晶的中等覆盖范围促进。我们的数据驱动方法将生长条件与晶体形态及其光学反应相关联，提供了一种实用且必要的途径，以应对具有所需的光学和电子性能的2D TMD及其合成的挑战。
Semiconducting transition metal dichalcogenides (TMDs) combine strong light-matter interaction with good chemical stability and scalable fabrication techniques, and are thus excellent prospects for optoelectronic, photonic and light-harvesting applications. Controllable fabrication of high-quality TMD monolayers with low defect content is still challenging and hinders their adoption for technological application. The optical properties of chemical vapor deposition (CVD) grown monolayer MoS$_2$ are largely influenced by the stoichiometry during CVD by controlled sulfurization of molybdenum (Mo) precursors. Here, we investigate how the sulfur concentration influences the sample morphology and, both globally and locally, their optical response. We confirm that samples grown under a Mo:S > 1:2 stoichiometric ratio have regular morphology facilitated by a moderate coverage of triangular monocrystals with excellent optical response. Our data-driven approach correlates growth conditions with crystal morphology and its optical response, providing a practical and necessary pathway to address the challenges towards the controlled synthesis of 2D TMDs and their alloys with desired optical and electronic properties.
