论文标题
由Moiré超级晶格在IR上绘制的石墨烯中替代B原子的空间隔离（111）
Spatial segregation of substitutional B atoms in graphene patterned by the moiré superlattice on Ir(111)
论文作者
论文摘要
在纳米级限制的有序结构的制造是现代技术的基石挑战。在这项工作中，我们展示了IR（111）支持的石墨烯模板中自然发生的Moiré模式如何形成替代硼的2D有序阵列。互补的实验和理论方法提供了硼种类分布，粘结构型，与IR（111）的界面相互作用以及对石墨烯电子结构的影响的全面描述。原子分辨的扫描隧道显微镜图像和密度功能理论计算表明，硼最好形成石墨烯Moiré超级晶格的几何较低区域中的替代缺陷的小聚集体，通过诱导石墨烯局部弯曲朝下IR（111）。令人惊讶的是，计算表明，由于电子不足的硼的掺入不会导致P型掺杂增强，因为石墨烯层的局部波纹促使虹膜底物的电子吸收，从而补偿由于替代性硼造成的初始电子损失。扫描隧道光谱和角度分辨的光发射光谱测量证实了硼种类的阵列不会改变费米水平附近的石墨烯的电子结构，因此保留了由IR诱导的轻微P型掺杂（111）。
Fabrication of ordered structures at the nanoscale limit poses a cornerstone challenge for modern technologies. In this work we show how naturally occurring moiré patterns in Ir(111)-supported graphene template the formation of 2D ordered arrays of substitutional boron species. A complementary experimental and theoretical approach provides a comprehensive description of the boron species distribution, bonding configurations, interfacial interaction with Ir(111) and the impact on graphene's electronic structure. Atomically-resolved scanning tunnelling microscopy images and density functional theory calculations reveal that boron preferably forms small aggregates of substitutional defects in geometrically low regions of the moiré superlattice of graphene, by inducing local bending of graphene towards the underlying Ir(111). Surprisingly, calculations reveal that the incorporation of electron deficient boron does not lead to an enhanced p-type doping, as the local rippling of the graphene layer prompts electron uptake from the iridium substrate that compensates the initial electron loss due to substitutional boron. Scanning tunnelling spectroscopy and angle-resolved photoemission spectroscopy measurements corroborate that the arrays of boron species do not modify the electronic structure of graphene near the Fermi level, hence preserving the slight p-type doping induced by Ir(111).
