论文标题
INAS/GAAS自组装纳米结构中的润湿层的研究差异差异光谱
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
论文作者
论文摘要
作为具有深远物理学和有前途的应用潜力的系统，已经研究了数十年来应变诱导的自组装半导体纳米结构。该系统的光学和电气性能主要由纳米结构确定，但可能会受到纳米结构演化的通常存在的二维结构的极大影响，即所谓的润湿层（WL）。 WL构型可以随着不同的生长条件而变化，并进一步影响纳米结构的形态和特性。这是一篇评论文章，介绍了在研究INAS/GAAS系统中使用反射差异光谱的WLS演变的最新进展。引入了Stranski-Krastanov生长模式中的不同种类的WL演化过程。提到了鉴别原子的隔离和解吸以及生长中断的影响。还讨论了在液滴外观方法中润湿层的存在和进化过程。
As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of years. The optical and electrical properties of this system are mainly determined by the nanostructures, but can be greatly affected by the generally existent two dimensional structures from which the nanostructures evolve, the so called wetting layer (WL). The WL configurations can be varied with different growth conditions, and further influence the nanostructure morphology and properties. This is a reviewing article introducing some recent progresses in investigating the evolution of WLs in InAs/GaAs system with reflectance difference spectroscopy. Different kinds of WL evolution processes in Stranski-Krastanov growth mode are introduced. The segregation and desorption of indium atoms and the effect of growth interruption are mentioned. The existence and the evolution process of wetting layers in droplet epitaxy method are also discussed.
