论文标题
cucro $ _2 $薄膜的扩散辅助分子束外延
Diffusion-assisted molecular beam epitaxy of CuCrO$_2$ thin films
论文作者
论文摘要
使用分子束外延（MBE）生长多元素氧化物（MEO）通常具有挑战性，部分原因是化学计量控制困难。有时，如果其中一个元素在生长温度下是挥发性的，则可以使用吸附控制的生长模式大大简化化学计量控制。否则，化学计量控制仍然是实现高质量MEO电影增长的主要障碍之一。在这里，我们报告了一种称为扩散辅助外观的一种自限制的生长模式，其中过量物种扩散到底物中，并以类似于常规的吸附控制的外部外观类似的方式导致所需的化学计量。具体而言，我们证明，可以在宽的增长窗口上使用扩散辅助，高质量的外在cucro $ _2 $膜，而无需使用MBE进行精确的磁通控制。
Using molecular beam epitaxy (MBE) to grow multi-elemental oxides (MEO) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high quality MEO film growths. Here, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO$_2$ films can be grown over a wide growth window without precise flux control using MBE.
