论文标题
注射依赖性发射蓝升和线宽宽度的发光二极管的线宽扩大
Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
论文作者
论文摘要
III氮化物发光二极管（LED）表现出注入依赖性发射蓝光和线宽扩展，这对它们的颜色纯度非常有害。使用第一原理多尺度建模，可以准确捕获极化 - 齐射筛选，相空间填充和多体等离子体重归其化之间的竞争，我们解释了用先进的量子孔制造的极性III-氮化物LED的当前依赖性光谱特性。我们的分析发现了发光材料的载体动力学与注射依赖性光谱特征之间的基本联系。例如，由于孔的运输差和缓慢的载流子重组动力学，极性III二硝酸LED对其依赖注射的颜色纯度提供了不良控制，这迫使它们在退化的载体密度下或接近退化的载体密度。设计加速载体重组和运输并减少以给定电流密度操作LED所需的载体密度的设计减少了其依赖性波长偏移和线宽扩展。
III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-principles multi-scale modelling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.
