论文标题
通过亚氧化物分子束外延的无意掺杂P型SNO（001）的外延合成
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
论文作者
论文摘要
通过使用混合的SNO $ _2 $+SN源，我们证明了氧化物分子束的外晶束外延的生长，以〜1.0nm/min的生长速度，无需额外的氧气，以〜1.0nm/min的生长速度生长。这些薄膜在宽的底物温度范围内分别生长在150至450°C。因此，我们提出了克服高SN或SNO $ _2 $细胞温度的局限性以及在MBE MBE的前MBE生长中遇到的狭窄生长窗口的局限性的另一种途径。原位激光反射仪和视线四极杆质谱法用于研究SNO解吸的速率随底物温度的函数。尽管在TS = 450°C时在TS = 450°C下解吸是生长速率的限制，但在真空生长后，SNO膜在这种温度下并未解吸。 SNO（001）薄膜是透明且无意间的P型掺杂的，孔的浓度和迁移率分别为0.9至6.0x10 $^{18} $ CM $ $^{ - 3} $和2.0至5.5 cm $^2 $/v.s。在低温下获得的这些P型SNO膜对于后端（BEOL）兼容应用以及与P-N型氧化物在P-N OROJUNTICT和田间效应晶体管中的集成有望
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
