论文标题
1T-VSE2中的多个带费表面及其对电荷密度波相的影响
Multi band Fermi surface in 1T-VSe2 and its implication for charge density wave phase
论文作者
论文摘要
在这里，我们的角度解析光发射光谱实验表明，1T-VSE2主机电子状态的表面条带结构以前没有预测或探测。较早支持电荷密度波阶段的主张可以用这些新发现来解释。它的费米表面被发现在布里渊区的任何点没有凝并且对电子结构的翘曲效应，归因于先前的晶格失真，这是由于多个带的不同分散体引起的。基于这些新的发现和解释，需要在未来的研究中重建电荷密度波诱导对1T-VSE2的电子结构的修改。
Here, our angle resolved photoemission spectroscopy experiment reveled that the surface band structure of the 1T-VSe2 host electronic states that was not predicted or probed before. Earlier claims to support charge density wave phase can be all explained in terms of these new findings. Its Fermi surface found to be not gaped at any point of the Brillouin zone and warping effect on the electronic structure, attributed to the lattice distortion previously, is due to the different dispersion of the multiple bands. Based on these new findings and interpretations, charge density wave induced modification on the electronic structure of 1T-VSe2 needs to be reconstructed in the future studies.
