论文标题
多层级带雪崩光电二极管的噪声模型
A Noise Model for Multilayer Graded-Bandgap Avalanche Photodiodes
论文作者
论文摘要
多层分级带雪崩光电二极管（APD）是未来的确定性光电培养基，这是由于其确定性放大并在楼梯方向上操作时通过冲击电离进行了双重逐步增益。然而，随着步骤数量的增加，逐步影响电离不规则的不规则性恶化。影响电离中的这些不规则性是这些APD的主要噪声来源。如果仔细研究和设计，这些固态设备可以取代常规的硅光电倍增管。以前考虑了相等的阶段电离概率，用于多步楼梯APD的噪声模型。但是，我们为多层级带APD的广义噪声模型得出了广义噪声模型，适用于所有操作偏见，其中包括子阈值，楼梯和隧道分解制度。此外，就多步楼梯APD的电离概率而言，先前的噪声模型的总过量噪声因子的表达遵循了Friis的总噪声因子。但是，我们证明我们的派生表达与Bangera的校正与Friis的总噪声系数相匹配。
Multilayer graded-bandgap avalanche photodiodes (APDs) are the future deterministic photomultipliers, owing to their deterministic amplification with twofold stepwise gain via impact ionization when operated in the staircase regime. Yet, the stepwise impact ionization irregularities worsen as the number of steps increases. These irregularities in impact ionization are the major source of noise in these APDs. These solid-state devices could replace conventional silicon photomultiplier tubes if they are carefully studied and designed. A noise model for multistep staircase APDs, considering equal stepwise ionization probabilities is previously reported. However, we derive a generalized noise model for multilayer graded-bandgap APDs, applicable for all operating biases, which include the sub-threshold, staircase, and tunnelling breakdown regimes. Moreover, the previous noise model's expression for the total excess noise factor in terms of ionization probabilities of the multistep staircase APD follows Friis's total noise factor. However, we demonstrate that our derived expression matches Bangera's correction to Friis's total noise factor.
