论文标题
Cu-苯烯基磁性隧道连接中的界面辅助室温磁倍率
Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions
论文作者
论文摘要
具有未配对的自旋的离域基于碳的自由基物种，例如明苯烯基（Ply）自由基，开辟了开发多功能有机自旋装置的途径。在这里，我们开发了一种基于三维阴影蒙版和原位沉积的新技术，以制造具有3x8μm2面积并改善形态学的面积为3x8μm2的层，基于Zn-Ply的有机磁性隧道连接（OMTJ）。非线性和弱温度依赖性电流（I-V）特性与低有机屏障高度的结合表明，隧穿是结构和尺寸优化的OMTJ中的主要运输机制。基于Cu-ply的OMTJ在室温下显示出高达14％的磁化率，这是由于在称为Spintface的金属 - 分子界面上形成了混合状态，这揭示了OMTJS设计中旋转依赖性界面修饰的重要性。特别是，Cu-Ply OMTJ显示了一个稳定的电压驱动的电阻转换响应，这表明它们用作建立分子尺度量子量子的新的可行且可扩展的平台。
Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors.
