论文标题
kagome Antiferromagnet Mn $ _3 $ sn的大型自旋大厅电导率在室温下
Large spin Hall conductivity in epitaxial thin films of kagome antiferromagnet Mn$_3$Sn at room temperature
论文作者
论文摘要
Mn $ _3 $ SN是一种非电线抗磁磁量子材料，具有磁性Weyl半金属金属状态，并且具有有效的记忆设备的巨大潜力。高质量的外延$ C $ - 平面Mn $ _3 $ sn薄膜已在蓝宝石底物上使用RU种子层生长。使用自旋泵送对$ c $ - 平面外观上的Mn $ _3 $ sn/ni $ _ {80} $ fe $ _ {20} $上的反向自旋效果测量，我们测量自旋 - 散端长度（$λ_{\ rm mn_3sn} $），以及$ = $ = $ = $} Mn $ _3 $ sn薄膜：$λ_ {\ rm mn_3sn} = 0.42 \ pm 0.04 $ nm和$σ_ {\ rm {sh}} = -702〜 \ 702〜 \ hbar/ e〜Ω尽管$λ_ {\ rm mn_3sn} $与较早的研究一致，但$σ_ {\ rm {sh}} $是高度的数量级，相反的符号。该行为是根据多余的MN来解释的，MN改变了我们的电影中的费米水平，从而导致观察到的行为。我们的发现证明了一种工程技术$σ_{\ rm {sh}} $ Mn $ _3 $ sn胶片的$，通过为功能性旋转器设备采用MN组成。
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$. While $λ_{\rm Mn_3Sn}$ is consistent with earlier studies, $σ_{\rm{SH}}$ is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in our films, leading to the observed behavior. Our findings demonstrate a technique for engineering $σ_{\rm{SH}}$ of Mn$_3$Sn films by employing Mn composition for functional spintronic devices.
