论文标题
电子和孔掺杂在NDNI1_XVXO3纳米结构中的作用
Role of electron and hole doping in NdNi1_xVxO3 Nanostructure
论文作者
论文摘要
镍氢盐镍,NDNIO3由于在同一温度附近同时出现了几种相变而吸引吸引人。 NDNIO3的电子特性非常复杂,因为结构失真,电子相关,电荷顺序和轨道重叠在过渡中起着重要作用。我们通过在NDNIO3纳米结构中通过掺杂单个3D金属V的电子和孔注射的影响,以了解电子性质的变化而没有任何结构变形。可逆的电阻率调制通过孔掺杂和通过电子掺杂的绝缘体过渡的五个数量级以上的数量级以上,以及主要电荷载体的切换。没有任何结构变形和外部应变的电子特性的调制可以打开新的方向,以考虑适用于新兴电子设备的NDNI1_XVXO3纳米结构。
Neodymium nickelate, NdNiO3 attracts attraction due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron correlation, charge ordering, and orbital overlapping play significant roles in the transitions. We report the effects of electron and hole injection via doping a single 3d metal, V, in the NdNiO3 nanostructures to understand the variations in the electronic properties without any structural distortion. A reversible resistivity modulation more than five orders of magnitude via hole doping and complete suppression of metal to insulator transition via electron doping is observed along with the switching of major charge carriers. The modulation of electronic properties without any structural distortion and external strain opens up new directions to consider the NdNi1_xVxO3 nanostructures applicable as emerging electronic devices.