论文标题
用于光电应用的锡硒氧化薄膜的CVD生长
CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications
论文作者
论文摘要
通过化学蒸气沉积（CVD）方法将锡硒（SNSE）薄膜生长到玻璃和氧化铝底物上。使用XRD，SEM和拉曼光谱法研究了AS成年薄膜的结构，微结构和形态特征，这表明玻璃上的膜是相位的纯为方向的SNSE，而铝上的胶片则是带有SNSE2杂质阶段的多晶型SNSE。通过UV-VIS光谱研究研究了生长在玻璃基板上的膜的光学特性。计算出的光条间隙为1至1.3 eV，用于沉积在玻璃基板上的膜中的间接和直接过渡。这两部薄膜的Arrhenius图显示了非常不同的热激活，即纯SNSE中接近Valance带最大值的TIN空置受体水平的0.088 eV，而SNSE2的中GAP SELENIUM空位为0.44 eV。通过使用白色和紫外线（400 nm）以固定的时间脉冲来照明样品（玻璃和氧化铝底物）来观察光响应。发现沉积在氧化铝底物上，由于SNSE/SNSE2 p-n异质酶显示出更好的光响应。
Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 impurity phase. The optical properties of the films grown onto glass substrate were studied by UV-vis spectroscopy. The optical band gap calculated is 1 to 1.3 eV for indirect and direct transition in film deposited on glass substrates. The Arrhenius plots of the two films show very different thermal activations i.e. 0.088 eV for tin vacancy acceptor level close to valance band maxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2. Photoresponse was observed by illuminating the sample (Glass and alumina Substrate) using white and UV light (400 nm) for a fixed time pulses. The deposited onto Alumina substrate were found to show better photoresponse due to SnSe/SnSe2 p-n heterojunctions.
