论文标题
量子异常的霍尔阶段和有效的倒置INAS/GASB量子井中的平面内Lande-G因子
Quantum anomalous Hall phase and effective in-plane Lande-g factor in an inverted InAs/GaSb quantum well
论文作者
论文摘要
发现在INAS/GASB量子井中发现的倒带结构（QW）可容纳拓扑量子旋转大厅（QSH）状态。 QSH绝缘子托管受时间转换对称性保护的旋转旋转边缘状态。最新的实验报告了由这些QSH国家产生的强大量化大厅电导，该QSH持续存在于平面磁场的强度高达$ 12 $ TESLA。基于该实验的结果，我们在这里介绍了有效的平面内部\ textit {g}因子的精确计算。我们的计算基于预测的平方晶格上的紧密结合哈密顿量，该晶格又重现了稍微修改的Bernevig-Hughes-Zhang（BHz）Hamiltonian。我们还研究了一种磁掺杂的拓扑相变\ textit {w.r.t。}。在合适的掺杂时，一种旋转状态渗透到大部分QW上，系统也进入量子异常的大厅（QAH）状态。我们通过计算量子厅电导的计算进一步确认了这一点，该电导显示出$ e^2/h $，而不是$ 2E^2/h $在这样的兴奋剂状态下。本文预测倒置QW中的一定范围可控参数，以实现Spintronics应用所需的无耗散电荷运输。
The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin-polarized edge states that are protected by the time-reversal symmetry. The latest experiment reported a robust quantized Hall conductance arising from these QSH states that persists in an in-plane magnetic field as strong as $12$ Tesla. Based on the result of this experiment, we present here a precise calculation of the effective in-plane Lande-\textit{g} factor. We based our calculations on the tight-binding Hamiltonian projected on a square lattice that reproduces a slightly modified Bernevig-Hughes-Zhang (BHZ) Hamiltonian. We also study the topological phase transitions \textit{w.r.t.} a magnetic doping. At suitable doping, one type of spin states penetrate to the bulk of the QW and the system also enters the Quantum Anomalous Hall (QAH) state. We further confirm this through the calculations of quantum Hall conductance which shows a plateau at $e^2/h$ rather than $2e^2/h$ at such a doping state. The paper predicts a certain range of controllable parameters in an inverted QW for enabling a dissipationless charge transport needed for spintronics application.
