论文标题
在强驾驶状态下的Flopping-Mode电子偶极旋转共振
Flopping-mode electron dipole spin resonance in the strong-driving regime
论文作者
论文摘要
通过传统的电子偶极旋转共振（EDSR）实现自旋速度的高保真控制，需要大约1 mt/nm的大磁场梯度，这也将量子与噪声相接起来，并将大量的驱动幅度和1 mV的大驱动振幅。 flopping模式是在双量子点中驱动电子EDSR的替代方法，其中两个点之间的较大位移会提高驱动效率。我们建议在强驾驶方向上操作flopping模式，以使用两个点之间的完整磁场差。在模拟中，减少所需的磁场梯度抑制了电荷噪声的不忠贡献，同时提供了高达60 MHz的RABI频率。但是，硅中的传导带的几乎变性引入了山谷的自由度，可以降低强驾驶模式的性能。这需要依赖山谷的脉冲优化，并使强大驾驶状态的操作值得怀疑。
Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increases the driving efficiency. We propose to operate the flopping-mode in the strong-driving regime to use the full magnetic field difference between the two dots. In simulations, the reduced required magnetic field gradients suppress the infidelity contribution of charge noise by more than two orders of magnitude, while providing Rabi frequencies of up to 60 MHz. However, the near degeneracy of the conduction band in silicon introduces a valley degree of freedom that can degrade the performance of the strong-driving mode. This necessitates a valley-dependent pulse optimization and makes operation to the strong-driving regime questionable.
