论文标题
GAAS中的自旋依赖性重组的系统研究
A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content
论文作者
论文摘要
据报道，在稀氮化物半导体中，在稳态光泵送条件下进行自旋依赖性重组（SDR）的系统研究随氮含量的函数。合金含量由使用Roosbroeck-Shockley关系的光致发光（PL）强度的拟合确定，并通过对拉曼光谱图中的类似Gan样LO $ _2 $ phonon峰进行验证。从形式的Gaas $ _ {1-x} $ n $ _x $的合金中获取的PL光谱，其中$ 0.022 <x <0.036 $在从线性式泵到圆形的泵上切换到$ x = 0.022 $ $ x = 0.022 $时，表现出PL强度的增加。这项工作使用了1.39 eV激光器，半径为0.6 $ $ m。观察到的SDR比率单调降低，随着$ x $的增加，$ x = 0.036 $达到1.5。此外，随着$ x $的增加，获得最大SDR的激发能力从$ x = 0.022 $的0.6兆瓦到15兆瓦，$ x = 0.036 $不等。这些观察结果与氮含量增加的电子活性缺陷密度的增加是一致的，氮含量以及负责SDR的那些以及其他标准的冲击式读取台（SRH）中心。
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $μ$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.
