论文标题

在非常规PTTE1.75单层中,大型自旋霍尔电导率和出色的氢进化反应活性

Large spin Hall conductivity and excellent hydrogen evolution reaction activity in unconventional PtTe1.75 monolayer

论文作者

Shao, Dexi, Deng, Junze, Sheng, Haohao, Zhang, Ruihan, Weng, Hongming, Fang, Zhong, Chen, Xing-Qiu, Sun, Yan, Wang, Zhijun

论文摘要

由于潜在的应用,二维(2D)材料引起了很多关注。在这项工作中,我们提出,基于第一原则计算,(2 $ \ times $ 2)图案ptte $ _2 $单层与订购良好的TE空位(PTTE $ _ {1.75} $)形成的Kagome晶格具有Kagome晶格(ptte $ _ {1.75} $),可容纳大型自旋电导率(SHC)和出色的氢气进化反应(她)的活动(她的出色的氢化反应)。非常规性依赖于无SIC的最高价乐队的$ A1@1b $ band代表(BR)。大SHC来自TE空位引起的非中心对称结构中的Rashba自旋轨道耦合(SOC)。即使它具有金属SOC频段结构,$ \ mathbb z_2 $不变性的定义很明确,这是由于直接带隙的存在,并且被计算为非平凡。计算出的SHC在Fermi级别($ e_f $)处于1.25 $ \ times 10^3 \ frac {\ hbar} {e}(ω〜cm)^{ - 1} $。通过将化学势从$ e_f-0.3 $调整到$ e_f+0.3 $ eV,它从$ -1.2 \ times 10^3 $到3.1 $ \ times 10^3 \ frac {\ hbar} {\ hbar} {e} {e} {e}(ω此外,我们还发现图案单层中的TE空缺可以引起她的精彩活动。我们的结果不仅为搜索具有较大SHC的2D材料提供了一个新的想法,即通过在大型SOC系统中引入反演对称性破坏空缺,而且还提供了可行的系统,具有可调的SHC(通过施加门电压)和出色的活动。

Two-dimensional (2D) materials have gained lots of attention due to the potential applications. In this work, we propose that based on first-principles calculations, the (2$\times$2) patterned PtTe$_2$ monolayer with kagome lattice formed by the well-ordered Te vacancy (PtTe$_{1.75}$) hosts large spin Hall conductivity (SHC) and excellent hydrogen evolution reaction (HER) activity. The unconventional nature relies on the $A1@1b$ band representation (BR) of the highest valence band without SOC. The large SHC comes from the Rashba spin-orbit coupling (SOC) in the noncentrosymmetric structure induced by the Te vacancy. Even though it has a metallic SOC band structure, the $\mathbb Z_2$ invariant is well defined due to the existence of the direct band gap and is computed to be nontrivial. The calculated SHC is as large as 1.25$\times 10^3 \frac{\hbar}{e} (Ω~cm)^{-1}$ at the Fermi level ($E_F$). By tuning the chemical potential from $E_F-0.3$ to $E_F+0.3$ eV, it varies rapidly and monotonically from $-1.2\times 10^3$ to 3.1$\times 10^3 \frac{\hbar}{e} (Ω~cm)^{-1}$. In addition, we also find the Te vacancy in the patterned monolayer can induce excellent HER activity. Our results not only offer a new idea to search 2D materials with large SHC, i.e., by introducing inversion-symmetry breaking vacancies in large SOC systems, but also provide a feasible system with tunable SHC (by applying gate voltage) and excellent HER activity.

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