论文标题
梁测试结果25 $ $ m和35 $ $ m厚的FBK UFSD] {梁测试结果25 $μ$ m和35 $μ$ m厚的FBK FBK Ultra Fast Fast Fast Silicon探测器
Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors
论文作者
论文摘要
本文介绍了Fondazione Bruno Kessler生产的第一个非常薄的超快速硅探测器（UFSD）的测量值；使用12 GEV/c的横梁，将数据收集在CERN PS的梁测试设置中。已经考虑了标称厚度为25 $ $ m和35美元$ m的UFSD和1 $ \ times $ 1 $ \ text {mm}^2 $的面积，以及额外的HPK 50- $ m $ m厚的传感器，被视为参考。他们的定时性能已作为应用电压和增益的函数研究。对于25 $ $ m厚的UFSD，已获得约25 ps和22 ps的时间分辨率为120 V和240 V。
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.
