论文标题
由于辐射和螺旋螺旋体重组而导致的胎质丢失
Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations
论文作者
论文摘要
基于第一原理密度函数理论的输入的完全显微镜多体模型用于计算由于散装校的辐射和螺丝剂重组而导致的载体损失。结果表明，在用作激光器的应用范围内，螺旋钻过程主导了载体密度的损失。螺旋钻的损失至关重要地取决于$ H_6 $ Valence频段的能量位置。在50 $ \的低温温度下，$ k（100 $ \，$ k）凸出器系数，$ c $，在这些乐队和价值bandedge之间已发布距离的范围内变化约六（3）个数量级。如果距离分别大于或更大，则在这些范围的高端和低端处的$ c $值。在室温下，灵敏度降低到大约四倍，$ c $值在$ 0.4 $至$ 1.6 \ times 10^{ - 27} $ cm $^6 $ s $ s $^{ - 1} $之间。在这里，辐射损失占主导地位，最高约$ 10^{16}/$ cm $^3 $，带有损失系数$ b \ 10^{ - 11} $ cm $^3 $ s $ s $^{ - 1} $。辐射损失的损失比典型的散装III-V材料低约两到三倍。
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the losses for carrier densities in the range typical for applications as lasers. The Auger loss depends crucially on the energetic position of the $H_6$ valence bands. At cryogenic temperatures of 50$\,$K (100$\,$K) the Auger coefficient, $C$, varies by about six (three) orders of magnitude within the range of published distances between these bands and the valence bandedge. Values for $C$ at the high and low end of these ranges are found if the distance is smaller or larger than the bandgap, respectively. At room temperature the sensitivity is reduced to about a factor of four with $C$ values ranging between $0.4$ and $1.6\times 10^{-27}$cm$^6$s$^{-1}$. Here, radiative losses dominate for carrier densities up to about $10^{16}/$cm$^3$ with a loss coefficient $B\approx 10^{-11}$cm$^3$s$^{-1}$. The radiative losses are about two to three times lower than in typical bulk III-V materials for comparable wavelengths.
