论文标题
用于内存应用的抗铁磁MN2AU中电流驱动的写作过程
Current-driven writing process in antiferromagnetic Mn2Au for memory applications
论文作者
论文摘要
当前脉冲驱动的neel载体旋转金属抗铁磁铁是抗铁磁旋转型的最有前途的概念之一。我们从显微镜上表明，使用单电流脉冲可以在跨形设备结构的完整区域中反复地将原型化合物MN2AU的外延薄膜的Neel载体反抗。带对齐的交错磁化的结果域模式是长期稳定的启用内存应用程序。我们以20 K的低加热来实现此切换，这对于快速有效的设备而言，无需热激活，这是有希望的。当前的依赖性可逆域壁运动表现出作用在域壁上的Neel自旋轨道扭矩。
Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.
