论文标题
大厅在二维电子流体的poiseuille流动中的效应
Hall effect in Poiseuille flow of two-dimensional electron fluid
论文作者
论文摘要
最近在高质量导体中实现了电荷运输的流体动力状态。在流体动力和欧姆机制中，长样本的大厅电阻的主要部分由洛伦兹力量和电力之间的平衡确定，作用于传导电子。实验观察到水动力样品中大厅电阻与这种“标准”值的偏差通常与Navier-Stokes方程中的Hall粘度项有关。在这项工作中，我们从理论上研究了二维电子流体的Poiseuille流动中的大厅效应。我们表明，近边缘的半易层层具有粒子间平均自由路径的宽度，不可避免地会出现在样品边缘附近，给出了对霍尔电阻的贡献，这与霍尔粘度的大量贡献相当。这样，通常通过通常的接触技术在流体动力学样本中与“标准”的抗测量偏差应与散装中的霍尔粘度和近边层中的半合理效应相关联
The hydrodynamic regime of charge transport has been recently realized in high-quality conductors. In the hydrodynamic as well as in the Ohmic regimes the main part of the Hall resistance of a long sample is determined by the balance between the Lorentz force and the electric force, acting on conduction electrons. Experimentally observed deviations of the Hall resistance in hydrodynamic samples from such the ''standard'' value are usually associated with the Hall viscosity term in the Navier-Stokes equation. In this work we theoretically study the Hall effect in a Poiseuille flow of a two-dimensional electron fluid. We show that the near-edge semiballistic layers with the width of the order of the inter-particle mean free path, which inevitably appear near sample edges, give the contribution to the Hall resistance which is comparable with the bulk contribution from the Hall viscosity. In this way, the measured deviations of the Hall resistance from the ''standard'' one in hydrodynamic samples by the usual contact techniques should be associated with both the Hall viscosity in the bulk and the semiballistic effects in the near-edge layers
