论文标题
开罗$ _3 $/cAMNO $ _3 $异质结构的异常大厅效应的电场控制
Electric field control of anomalous Hall effect in CaIrO$_3$/CaMnO$_3$ heterostructure
论文作者
论文摘要
我们展示了在开罗出现异常霍尔效应的电场控制，$ _3 $/cAMNO $ _3 $异质结构。我们通过调整外延应变来制造电子型和孔型载体样品，然后通过电动双层门控技术控制开罗$ _3 $ layer的载体密度。由于开罗的费米能量$ _3 $被调整为Dirac Line节点附近，因此在两个载波型样品中都会扩大异常的霍尔电导率。该结果表明，异常的大厅效应来自固有的起源，反映了开罗$ _3 $中的狄拉克的分散。我们提出，界面铁磁性引起的频段拆分产生了狄拉克线节点附近的几个带交叉点。这些要点是浆果曲率的来源，并导致了异常的大厅效应。
We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin reflecting the Dirac like dispersion in CaIrO$_3$. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points play as a source of the Berry curvature and contribute to the anomalous Hall effect.
