论文标题
氮化铝的室温量子发射极
Room-Temperature Quantum Emitter in Aluminum Nitride
论文作者
论文摘要
能够生产单个光子的设备是许多量子技术的基本构建块。例如，使用半导体量子点以及批量和二维材料中的缺陷位点，在固态的工程量子发射方面取得了重大进展。在这里，我们报告了发现嵌入氮化铝铝缝隙深处的室温量子发射极。使用光谱，极化和光子计数时间分辨的测量结果，我们证明了明亮的（$> 10^5 $计数），纯净（$ g^{（2）}（0）<0.2 $）和偏振室 - 体温量子光量子光发射来自此项目非常重要的半管子中有色中心的颜色中心。
A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
