论文标题
超薄MNBI2TE4膜的电子结构的演变
Evolution of the electronic structure of ultrathin MnBi2Te4 Films
论文作者
论文摘要
内在磁性绝缘子MNBI2TE4的超薄膜具有引人入胜的量子特性,例如量子异常霍尔效应和轴突绝缘子状态。在这项工作中,我们系统地研究了MNBI2TE4薄膜电子结构的演变。随着膜厚度的增加,电子结构从具有较大能量隙的绝缘体类型变为具有间隙拓扑表面状态的绝缘体类型,但是,这与散装材料仍然截然不同。通过碱金属原子的表面掺杂,Rashba分裂带逐渐出现并与拓扑表面状态杂交,这不仅可以调解批量和薄膜MNBI2TE4的电子结构之间的令人困惑的差异,而且还提供了一个有趣的平台,以建立对(量子)效果有吸引力的Rashba Ferromagnet(量子)Anomalos anomalos anomalos anomalos anomalos onomalos anomalos onomalos anomalos anomalos anomalos onomalos效应。我们的结果为MNBI2TE4薄膜有趣的量子特性的理解和工程提供了重要的见解。
Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator-type with a large energy gap to one with in-gap topological surface states, which is, however, still drastically different from the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.