论文标题
由原子精度的高级制造装置中的当前路径通过氮呈钻石磁磁显微镜成像
Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
论文作者
论文摘要
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics.在这些应用中，关键问题包括在APAM结构或附近发生当前流动以及是否存在泄漏电流的位置。通常，APAM结构中当前流量的检测和映射是在数字增强应用中获得可靠设备的宝贵诊断工具。在本文中，我们对从APAM测试装置中流动的表面电流密度的杂散磁场进行了氮胶囊（NV）宽场磁成像，并在μM分辨率的视图上流动。为此，我们集成了具有表面NV合奏的钻石与该设备（以两个平行MM大小的丝带进行图案），然后从注入APAM设备中的DC电流中映射磁场，以家用的NV NV广场显微镜中的APAM设备。 2D磁场图用于重建表面电流密度，使我们能够获取有关电流路径，设备故障的信息，例如阻碍电流流动的扼流点以及APAM定义的P型P掺杂区域之外的电流泄漏。对电流密度重建图的分析显示，预计灵敏度为〜0.03 A/m，对应于200μm宽的APAM色带中最小的可检测到的电流〜6μA。这些结果表明，APAM材料的NV宽场磁力测定法具有破坏性分析能力，从而开放了研究其他尖端微电子设备的可能性。
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
