论文标题
\ k {appa} -phase ga2o3在蓝宝石，甘恩，aln和ysz基板上的MOCVD增长和带偏移
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
论文作者
论文摘要
\ k {appa} - 相ga2O3薄膜的外延生长在C-平面蓝宝石，gan-和alnon-sapphire上进行了研究，以及（100）面向YTTRIA稳定的氧化锆（YSZ）底物通过金属有机化学蒸发（MOCVD）。通过全面的材料表征研究结构和表面形态学特性。纯\ k {appa} -ga2O3膜成功地在gan-，on-on-on-on-on-on-on-on-on-in-on-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-in-phire下生长和YSZ膜片，包括对生长参数（包括前体摩尔流速，腔室压力和生长温度）的系统性调整在研究的生长条件下的Ga2O3。 \ k {appa} -ga2O3膜在不同底物上摄影的晶体结构，表面形态和粗糙度的影响是前体流速的函数。 \ k {appa} -Ga2O3膜的高分辨率扫描透射电子显微镜（HR-STEM）成像揭示了外延膜与蓝宝石，GAN和YSZ底物之间的突然接口。单晶体矫正剂\ k {appa} Ga2O3膜的生长是通过分析茎纳米二伸缩模式来确认的。通过高分辨率X射线光电学光谱（XPS）测量，研究了在不同底物上生长的\ k {appa} -ga2O3薄膜的化学成分，表面化学计量和带隙能。 \ k {appa} -ga2o3和c-Sapphire，aln和YSZ底物之间的三个接口处的II（交错）频段对齐是由XPS确定的，除\ k {appa} -ga2o3/gan界面外，显示I（straddling type i（straddling））band arignment。
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.
