论文标题

在超导量子处理器上模拟Chern绝缘子

Simulating Chern insulators on a superconducting quantum processor

论文作者

Xiang, Zhong-Cheng, Huang, Kaixuan, Zhang, Yu-Ran, Liu, Tao, Shi, Yun-Hao, Deng, Cheng-Lin, Liu, Tong, Li, Hao, Liang, Gui-Han, Mei, Zheng-Yang, Yu, Haifeng, Xue, Guangming, Tian, Ye, Song, Xiaohui, Liu, Zhi-Bo, Xu, Kai, Zheng, Dongning, Nori, Franco, Fan, Heng

论文摘要

量子大厅的效应是现代冷凝物理物理学基础的基础,不断启发新的理论,并预测物质的新兴阶段。在这里,我们在实验上展示了三种类型的Chern绝缘子,并在可编程的30 Qubit-ladder超导处理器上具有合成尺寸。我们直接沿着合成尺寸测量了2D Chern绝缘子的带结构,并具有Aubry-André-Harper链的各种配置,并观察到边缘激发的动态定位。借助这两个拓扑签名,我们的实验在合成2D Chern绝缘子中实现了散装对应关系。此外,我们在梯子型超导体处理器上模拟了两个不同的双层Chern绝缘子。具有两个耦合链的相同和相反的定期调制现场电位,我们模拟了拓扑非平地的边缘状态,其霍尔电导率为零,而Chern绝缘子分别具有更高的Chern数字。我们的工作表明,使用超导码头来研究量子物质的不同有趣的拓扑阶段的潜力。

The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.

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