论文标题
为纳米电子应用制造高电阻的Nio薄膜
Fabrication of highly resistive NiO thin films for nanoelectronic applications
论文作者
论文摘要
原型电荷转移绝缘子NIO的薄膜似乎是新型纳米电子设备的有前途的材料。然而，材料的制造具有挑战性，大多数是P型半导体阶段。在这里，提出了一个阶乘实验的结果，以优化使用溅射沉积的薄膜的薄膜特性。进行集群分析，并发现四种主要类型的膜类型。其中，确定了所需的绝缘阶段。从这种材料中，制造了纳米级设备，这表明结果将其延伸到相关的长度尺度。报告了初始切换结果。
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.
