论文标题
抗铁磁拓扑绝缘子中的零线模式
Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
论文作者
论文摘要
最近，磁性域壁已经在抗磁性拓扑绝缘子MNBI $ _2 $ TE $ _4 $中实验观察到，我们发现拓扑零线模式（ZLMS）出现在域墙壁上。在这里，我们从理论上证明了这些ZLM在MNBI $ _2 $ TE $ _4 $多层中依赖于层。对于具有平面外铁磁性的域壁，我们发现ZLM平均分布在奇数层中。当域壁具有平面内磁化时，由于平面镜像对称性断裂，ZLM也可以在偶数层中存在。此外，导电通道主要分布在最外层的层，层厚度增加。我们的发现制定了操纵ZLM的策略，也可以利用来区分相应的磁性结构。
Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi$_2$Te$_4$, where we find that the topological zero-line modes (ZLMs) appear along the domain walls. Here, we theoretically demonstrate that these ZLMs are layer-dependent in MnBi$_2$Te$_4$ multilayers. For domain walls with out-of-plane ferromagnetism, we find that ZLMs are equally distributed in the odd-number layers. When domain walls possess in-plane magnetization, the ZLMs can also exist in even-number layers due to in-plane mirror-symmetry breaking. Moreover, the conductive channels are mainly distributed in the outermost layers with increasing layer thickness. Our findings lay out a strategy in manipulating ZLMs and also can be utilized to distinguish the corresponding magnetic structures.
