论文标题
通过静态和瞬态的第三谐波光谱法探测单层半导体中的电子状态
Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopy
论文作者
论文摘要
电子状态及其动力学对于电子和光电应用至关重要。在这里,我们探测单层MOS2中的各种相关电子状态,例如多个激子Rydberg状态和自由粒子能带,其相对对比度高达200,从宽带(从〜1.79到3.10 eV)(从〜1.79到3.10 eV),静态第三谐波镜检查,这是由理论计算进一步支持的。此外,我们引入了瞬态第三谐波光谱法,以证明第三次谐波生成可以在〜2.18 eV时的调制深度超过〜94%的〜94%进行全面调节,从而直接证明了与携带者 - Exciton和载体 - 载体 - 载波相互作用相关的占主导地位载体松弛过程。我们的结果表明,静态和瞬态的第三谐波光谱镜不仅是表征单层半导体及其异质结构的有前途的技术,而且是颠覆性光子和光电应用的潜在平台,包括全光调制和成像。
Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.