论文标题

在薄NBN膜中,与疾病无关的电子散射时间的证据

Evidence of the disorder-independent electron-phonon scattering time in thin NbN films

论文作者

Lomakin, A. I., Baeva, E. M., Triznova, A. D., Titova, N. A., Zolotov, P. I., Semenov, A. V., Sunegin, D. E., Lubenchenko, A. V., Kolbatova, A. I., Goltsman, G. N.

论文摘要

我们报告了障碍对超薄超导NBN膜中电子参数和非弹性散射机制的影响的实验研究,该膜通常用于单光子检测器中。 An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering费率$τ_{e-ph}^{ - 1} $。我们观察到$τ_{e-ph}^{ - 1} $及其温度依赖性对疾病不敏感,而无序金属中的E-PH散射模型未描述,这可能是由于存在弱小的金属晶粒。随着温度的降低,温度依赖性$τ_{e-ph}^{ - 1} $从$ t^3 $变为$ t^2 $,这可能是由于E-PH散射中涉及的声子的尺寸降低。超薄NBN膜的材料参数的值可用于优化基于NBN的电子设备的性能。

We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering rates $τ_{e-ph}^{-1}$. We observe that $τ_{e-ph}^{-1}$ and their temperature dependencies are insensitive to disorder that is not described by the existing models of the e-ph scattering in disordered metals and can be due to the presence of weakly disordered metal grains. As the temperature decreases the temperature dependence $τ_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which can be result of a decrease in the dimension of the phonons involved in the e-ph scattering. The obtained values of material parameters of ultrathin NbN films can be useful for optimization of performance of NbN-based electronic devices.

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