论文标题
双层石墨烯-crcl的带隙开口
Band Gap Opening in Bilayer Graphene-CrCl$_3$/CrBr$_3$/CrI$_3$ van der Waals Interfaces
论文作者
论文摘要
我们报告了通过双层石墨烯（BLG）/Trihalide（CRX $ _3 $; X = Cl，Br，I）van der waals接口的运输实验研究。在所有情况下，都会发生从BLG到CRX $ _3 $的大型电荷转移（达到超过$ 10^{13} $ CM $ $^{ - 2} $的密度超过$ 10^{13} $），并生成垂直于接口的电场，该接口在BLG中打开频带隙。我们确定电导率的激活能量的差距，并与最新的理论一致性地占了$σ$频段对BLG介电敏感性的贡献的最新一致性。我们进一步表明，对于BLG/CRCL $ _3 $和BLG/CRBR $ _3 $，可以从低温电导率的栅极电压依赖性中提取频带隙，并使用此发现来完善对磁场的间隙依赖性。我们的结果允许对BLG的电子特性与理论预测进行定量比较，并表明占据CRX $ _3 $传统带的电子相关。
We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $σ$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl$_3$ and BLG/CrBr$_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX$_3$ conduction band are correlated.
