论文标题
片上低损坏全光摩西$ _2 $调节器
On-chip low-loss all-optical MoSe$_2$ modulator
论文作者
论文摘要
单层过渡金属二核苷（TMDC），例如Mos $ _2 $，Mose $ _2 $，WS $ _2 $和WSE $ _2 $，具有直接的频带，强烈的旋转式耦合，以及在原子量表上可以散发出有效的光线，并具有效率的光线，且效率相差。然而，要构建使用这些功能的下一代光子设备，首先是对TMDC中的全光控制机制进行建模。在此，提出了一个简单的模型，以量化35 $ \，$ \ textmu m long si $ _3 $ n $ n $ _4 $ waveguide-waveguide-nopticational-Mose Mose $ _2 $调制器的性能。使用此型号，对于横向磁性（TM）和横向电动（TE）极化泵信号的开关能量为14.6 $ \，以$λ= \，$ 480 $ \，$ nm获得$ PJ。此外，对于TM和TE极化探头信号，分别以$λ= \，$ 500 $ \，$ nm的价格达到了20.6 $ \，$ dB和20.1 $ \，$ dB的最大灭绝比，分别获得了超低插入损失$ <0.3 \，$ db。此外，该设备的超快恢复时间为50 $ \ $ ps，同时保持了实用应用的高消光比。这些发现有助于建模和设计基于TMDC的新型光子设备。
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for efficient light emission, valleytronics, and polaritonic lasing, respectively. Nevertheless, to build next-generation photonic devices that make use of these features, it is first essential to model the all-optical control mechanisms in TMDCs. Herein, a simple model is proposed to quantify the performance of a 35$\,$\textmu m long Si$_3$N$_4$ waveguide-integrated all-optical MoSe$_2$ modulator. Using this model, a switching energy of 14.6$\,$pJ is obtained for a transverse-magnetic (TM) and transverse-electric (TE) polarised pump signals at $λ=\,$480$\,$nm. Moreover, maximal extinction ratios of 20.6$\,$dB and 20.1$\,$dB are achieved for a TM and TE polarised probe signal at $λ=\,$500$\,$nm, respectively, with an ultra-low insertion loss of $<0.3\,$dB. Moreover, the device operates with an ultrafast recovery time of 50$\,$ps, while maintaining a high extinction ratio for practical applications. These findings facilitate modeling and designing novel TMDC-based photonic devices.
